TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Anil VOHRA, Professor (Full), M.Sc., Ph.D

Comparison between the current in a Ge quantum-well diode

IG vs VGS curves with various metal gates for Si with and without

Effect of 3 nm gate length scaling in junctionless double

ION/IOFF ratio comparison of this work with reports in literature

IG vs VGS curves with Ta and W as metal gates for In0.53Ga0.47As

Anil VOHRA, Professor (Full), M.Sc., Ph.D

Photo-generation Rate generated in the model.

Device structure for 10 nm DG In0.53Ga0.47As NMOSFET with SiO2 +

Effect of 3 nm gate length scaling in junctionless double

Anil VOHRA, Professor (Full), M.Sc., Ph.D

Effect of 3 nm gate length scaling in junctionless double

Sketch of BTBT between two quantized carriers gases. The